savantic semiconductor product specification silicon npn power transistors 2SC3822 d escription with to-220fa package high voltage ,high speed applications for power switching ,power amplifier, power driver and electronic supply applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon power transistors 2SC3822 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 400 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 0.8 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.2 v i cbo collector cut-off current v cb =450v; i e =0 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =2a ; v ce =5v 10 30 f t transition frequency i c =0.1a ; v ce =10v 100 mhz c ob collector output capacitance f=1mhz;v cb =10v 25 pf
savantic semiconductor product specification 3 silicon power transistors 2SC3822 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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